New OptiMOS™ 6 40 V family: Impressive RDS(on) combined with superior switching performance

OptiMOS6_40V_PQFN_3x3.png_2041034770Munich, Germany – 14 March 2019 – Committed to set new technology standards in discrete power MOSFET technologies, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces its new OptiMOS™ 6 family. Based on Infineon´s thin wafer technology it enables significant performance benefits and will cover a wide voltage range. The new 40 V MOSFET family has been optimized for synchronous rectification in SMPS for servers, desktop PCs, wireless chargers, quick chargers, and ORing circuits. The new OptiMOS 6 family will be showcased at the APEC 2019 exhibition in Anaheim, CA.

Compared to the previous generation, the new OptiMOS 6 40 V delivers a 30 percent reduced on state resistance and improved figure of merits (Q g x R DS(on) down by 29 percent and Q gd x R DS(on) down by 46 percent). Hence, used in SMPS applications the devices are ideal for efficiency optimization over a wide range of output power, avoiding the trade-off between low and high load conditions.

The efficiency curve clearly shows that OptiMOS 6 outperforms previous generation products at low output power levels due to its superior switching performance. This can be maintained at even higher output levels despite the dominance of R DS(on) losses. As a result, developers profit from easier thermal designs and less paralleling efforts leading to lower system cost.


The OptiMOS 6 power MOSFET 40 V family is available in two different packages:

  • SuperSO8, 5 mm x 6 mm, R DS(on) ranging from 5.9 mΩ down to 0.7 mΩ
  • PQFN 3×3, 3.3 mm x 3.3 mm, R DS(on) ranging from 6.3 mΩ down to 1.8 mΩ.

More information is available at

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