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Home Electronics News

World’s First automotive power MOSFETs in 300-millimeter thin-wafer technology

Electronics Maker by Electronics Maker
May 20, 2015
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Infineon Started World’s First Volume Production of Next Generation Automotive Power MOSFETs on 300-Millimeter Thin-Wafer Technology

Munich, Germany – May 19, 2015 – Infineon Technologies AG is the first company worldwide manufacturing automotive power MOSFETs on 300-millimeter thin wafers. The first product family OptiMOS™ 5 40Vis optimized for CO2 reduction applications. The products are manufactured at Infineon’s fab in Villach, Austria.

“With the automotive power MOSFETs in 300-millimeter thin-wafer technology
Infineon strengthens its technology and market leadership,“ says Jochen Hanebeck, President of the Automotive Division at Infineon Technologies AG. “Infineon ensures to offer high-performance automotive power MOSFETs in large scale volume production at competitive price. Our automotive customers will benefit from supply security and our long-term productivity roadmap of the 300-millimeter production line.”

Infineon’s leading 300-millimeter thin-wafer technology is a key basis for perfor-mance improvements of next-generation automotive power MOSFET product families. Thin-wafer technology minimizes power losses and enables compact MOSFET designs for high system efficiency and power density. With wafer thinning down to 60µm (0.06mm) OptiMOS 5 power semiconductors on 300-millimeter thin-wafer technology are among the world’s thinnest. For comparison: A sheet of standard writing paper features about 110µm (0.11mm).

Thanks to the 50 percent larger wafer diameter compared to standard 200-millimeter wafers, two-and-a-half times as many chips can be produced on each 300-millimeter wafer.

Performance leading OptiMOS 5 40V automotive power MOSFETs Infineon starts its OptiMOS 5 thin-wafer product portfolio with 40V variants in a S308 package (TSDSON-8) with a small footprint dimension of only 3.3 x 3.3mm.

Compared to the previous OptiMOS generation, the OptiMOS 5 40V products fea-ture a40 percent reduction in on-resistance RDS (on)and further minimize power losses. In addition, they offer a 35 percent lower Figure of Merit RDS(on)xQg to further optimize switching behavior. As a result, the OptiMOS 5 40V products deliver high power density and energy efficiency for a broad range of automotive BLDC and H-bridge drive applications such as power window, door control, sun roof, fuel pumps,and also valve control and fast switching DC/DC converters.

Tags: Power ElectronicsSemiconductor & IC
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