Offered in PowerPAK® SO-8 Single Package, Device Features Best in Class Gate Charge of 52 nC and Output Charge of 68 nC
MALVERN, Pa. — Feb. 18, 2019 — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 60 V TrenchFET®Gen IV n-channel power MOSFET in the 6.15 mm by 5.15 mm PowerPAK® SO-8 single package. Designed to increase the efficiency of power conversion topologies, the Vishay Siliconix SiR626DP offers 36 % lower on-resistance than previous-generation devices while delivering the lowest gate charge and output charge in its class.
The device released today combines a maximum on-resistance down to 1.7 mΩ at 10 V with ultra low gate charge of 52 nC, output charge of 68 nC, and COSS of 992 pF. The resulting gate charge times on-resistance and output charge times on-resistance — key figures of merit (FOM) for MOSFETs used in power conversion applications — are 32 % and 45 % lower, respectively, that previous-generation devices. The MOSFET’s COSS is 69 % lower.
The SiR626DP’s improved specifications are fine-tuned to minimize conduction and switching losses. The result is increased efficiency for synchronous rectification in AC/DC topologies; primary- and secondary-side switching in isolated DC/DC topologies for solar micro-inverters and telecom, server, and medical equipment power supplies; motor drive control in power tools and industrial equipment; and battery switching in battery management modules.
The MOSFET is 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free.
Samples of the SiR626DP are available now. Production quantities are available with lead times of 30 weeks subject to market conditions.
