Ideal for use in high frequency SMPSs and DC-DC converters, and as freewheeling and polarity protection diodes
Shanghai, China, March 16, 2016—Littelfuse, Inc., the global leader in circuit protection, has added a series of silicon Schottky devices designed for ultra-low forward voltage drop (VF) to its rapidly expanding power semiconductor portfolio.
The new DST Series Schottky Barrier Rectifiers will be displayed among other Littelfuse products at China’s leading exhibition of electronic components, Electronica China, March 15-17, 2016, in Shanghai, in Booth No. 3522 (E3 Hall).
Well-suited for use in high-frequency applications such as switch-mode power supplies, as well as DC application such as solar panel bypass diode and polarity protection diodes, the DST Series Schottky Barrier Rectifier is designed to meet the requirements of commercial and industrial applications. By delivering performance superior to conventional switching diodes, they offer high junction temperature capability, low leakage and ultra-low forward voltage drop. Their higher junction temperature capability and low leakage provide higher reliability in harsh, high-temperature environments.
“The DST Series’ ultra-low forward voltage drop performance is an important new addition to the growing Littelfuse power semiconductor device offering,” said Corey Deyalsingh, director of power control semiconductors at Littelfuse. “I’m confident it will help us add depth to our power semiconductor portfolio and expand our applications and market coverage.”
DST Series Schottky Barrier Rectifiers offer these key benefits:
- Their ultra-low forward voltage drop (VF) reduces thermal and electrical conduction losses, thereby improving system efficiency.
- Because they provide fast switching, they can be used in very high frequency applications with minimal switching loss.
- Their high junction temperature capability ensures high reliability in high ambient temperatures or in applications with minimal cooling available.
