Lowest Rdson 25-V and 30-V devices in 5 mm by 6 mm QFN package
Bangalore, 20th January 2015 — Texas Instruments (TI) introduced 11 new N-channel power MOSFETs to its NexFET™ product line, including the 25-V CSD16570Q5B and 30-V CSD17570Q5B for hot swap and ORing applications with the industry’s lowest on-resistance (Rdson) in a QFN package. In addition, TI’s new 12-V FemtoFET™ CSD13383F4 for low-voltage battery-powered applications achieves the lowest resistance at 84-percent below competitive devices in a tiny 0.6 mm by 1 mm package. For more information, samples or a reference design, visit www.ti.com/csd16570q5b-pr.
The CSD16570Q5B and CSD17570Q5B NexFET MOSFETs deliver higher power conversion efficiencies at higher currents, while ensuring safe operation in computer server and telecom applications. For instance, the 25-V CSD16570Q5B supports a maximum of 0.59 milliohms of Rdson, while the 30-V CSD17570Q5B achieves a maximum of 0.69 milliohms of Rdson. Read a blog, “Power MOSFET safe operating area (SOA) curves for designing with hot-swap and ORing FET controllers.” Download a 12-V, 60-A hot swap reference design featuring TI’s CSD17570Q5B NexFET.
TI’s new CSD17573Q5B and CSD17577Q5A can be paired with the LM27403 for DC/DC controller applications to form a complete synchronous buck converter solution. The CSD16570Q5B and CSD17570Q5B NexFET power MOSFETs can be paired with a TI hot swap controller such as the TPS24720. Download the application note “Robust Hot Swap Designs” to understand how a transistor is selected as a pass element and how to ensure safe operation under all possible conditions.
New NexFET products and key features
| Part Number | Application | Vds/Vgs | Package (mm) | Rdson max (mohm) | Qg (4.5) (nC) | |
| 4.5V | 10V | |||||
| CSD16570Q5B | ORing/Hot Swap | 25/20 | QFN 5×6 (Q5B) | 0.82 | 0.59 | 95 |
| CSD17570Q5B | 30/20 | 0.92 | 0.69 | 93 | ||
| CSD17573Q5B | Low Side Buck/ ORing/Hot Swap |
30/20 | QFN 5×6 (Q5B) | 1.45 | 1.0 | 49 |
| CSD17575Q3 | Low Side Buck | 30/20 | QFN 3.3×3.3 (Q3) | 3.2 | 2.3 | 23 |
| CSD17576Q5B | QFN 5×6 (Q5B) | 2.9 | 2.0 | 25 | ||
| CSD17577Q5A | High Side Buck | 30/20 | QFN 5×6 (Q5A) | 5.8 | 4.2 | 13 |
| CSD17577Q3A | QFN 3.3×3.3 (Q3A) | 6.4 | 4.8 | 13 | ||
| CSD17578Q3A | 9.4 | 7.3 | 7.9 | |||
| CSD17579Q3A | 14.2 | 10.2 | 5.3 | |||
| CSD85301Q2 | Dual Independent FET | 20/10 | QFN 2×2 (Q2) | 27 | N/A | 4.2 |
| CSD13383F4 | Load Switch | 12/10 | FemtoFET 0.6×1.0 (0402) | 44 | N/A | 2.0 |
Availability, packaging and pricing
Available in volume now from TI and its authorized distributors, the products range in price from US$0.10 for the FemtoFET CSD13383F4 to US$1.08 for the CSD17670Q5B and CSD17570Q5B, all in 1,000-unit quantities.
About TI’S NexFET power MOSFETs
TI’s NexFET power MOSFETs improve energy efficiency in high-power computing, networking, industrial and power supplies. These high-frequency, high-efficiency analog power MOSFETs give system designers access to the most advanced DC/DC power conversion solutions available.
