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Home Electronics News

TI drives high-voltage batteries with industry’s first 100-V high-side FET driver

Electronics Maker by Electronics Maker
February 4, 2016
in Electronics News
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Unprecedented flexibility and power protection for advanced industrial battery applications

Bangalore, 4h February, 2016 – Texas Instruments (TI) today introduced the first single-chip 100-V high-side FET driver for high-power lithium-ion battery applications, delivering advanced power protection and control. The bq76200 high-voltage solution efficiently drives high-side N-channel charge and discharge FETs in batteries commonly used in energy storage systems and motor-driven applications, including drones, power tools, e-bikes and more.

Compared to typical 50-V low-side FET driver solutions, the 100-V high-side FET driver provides greater protection against possible inductive transient events in motor-driven applications, which can cause battery voltages to jump as much as 200 percent above normal. The bq76200 also helps maintain constant battery monitoring and enhanced system diagnostics – even when charging and discharging is disabled.

Key features and benefits of the bq76200:

  • Versatile supply voltage range:Compatible with a variety of battery architectures, capacities and voltage ranges from 8-V to 75-V, with an absolute maximum of 100-V.
  • Advanced-protection FET control:The fast-switching feature minimizes fault response time and disables the discharge FET if a battery has been severely discharged.
  • Quick development time and reduced overhead:The adaptable driver works with small to large power FET arrays by simply scaling the charge-pump capacitor, reducing engineering overhead and speeding development time.
  • High integration and small package size:The bq76200 integrates a high-voltage charge pump and dual FET drivers into one 5-mm by 4.4-mm by 1-mm thin shrink small outline package (TSSOP).

The bq76200 can be used in conjunction with the bq76940 battery-monitoring family, allowing for the application to move to a high-side FET drive and ensure that communication is always possible. The bq76200 can also drive TI’s CSD19531Q5A 100-V NexFET™ power MOSFET as showcased in the bq76200 evaluation module.

 

Tags: Semiconductor & IC
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