Microsemi Continues to Expand Silicon Carbide Product Portfolios with Sampling of its Next-Generation 1200 V SiC MOSFET and 700 V Schottky Barrier Diode Devices
High Repetitive Unclamped Inductive Switching Capability, High Short-Circuit Withstand Rated SiC Solutions to be Demonstrated in Hall 6, Booth 318 ...
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