Can GaN transistors be paralleled? Yes!
By Yalcin Haksoz, Principal Engineer, Infineon Technologies Wide-bandgap (WBG) technology is increasingly becoming an alternative to traditional silicon MOSFETs in ...
Read moreBy Yalcin Haksoz, Principal Engineer, Infineon Technologies Wide-bandgap (WBG) technology is increasingly becoming an alternative to traditional silicon MOSFETs in ...
Read moreJanuary 28, 2021: Building upon the advantages of STMicroelectronics’ MasterGaN® platform, MasterGaN2 is the first in the new family to ...
Read moreMunich, Germany – 2 November 2020 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has launched a 1200 V ...
Read moreGaN modules meet industry standard footprints with superior system performance OTTAWA, Ontario, November 17, 2020 – GaN Systems, the global ...
Read moreDouble pulse test data shows near-total elimination of switching losses March 12 2020, Campbell, Ca., USA: Pre-Switch, Inc., a Silicon Valley ...
Read moreBy Paul Pickering, Mouser Electronics Over the last few years, the wireless charging market has seen a consolidation of standards ...
Read moreCompliance with IEEE 802.3bt delivers 90 Watts of power to applications including smart sensors, building automation and connected lighting [caption ...
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