Infineon launches new generation of GaN power discretes with superior efficiency and power density
Munich, Germany – 4 November 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced the launch of ...
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Tag: GaN
Infineon unveils the world’s thinnest silicon power wafer, pushing technical boundaries and improving energy efficiency
Infineon first to master handling and processing of ultra-thin 20-micrometer power semiconductor wafers Reducing wafer thickness cuts substrate resistance in ...
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Infineon announces next generation CoolGaN™ Transistor families built on 8-inch foundry processes
Munich, Germany – 29 May 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announces two new generations ...
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STMicroelectronics reveals flexible synchronous rectifier for efficient silicon or GaN converters
Helps simplify operation and save energy in industrial power supplies, portable-device chargers, and AC/DC adapters STMicroelectronics’ SRK1004 synchronous-rectifier controller eases ...
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STMicroelectronics’ 50W GaN converter enables high-efficiency power designs in consumer and industrial applications
Apr 7, 2021: The STMicroelectronics VIPerGaN50 simplifies building single-switch flyback converters up to 50 Watts and integrates a 650V gallium-nitride ...
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STMicroelectronics Introduces New 45W and 150W MasterGaN Devices for High-Efficiency Power Conversion
Sep 16, 2021: Easing the transition to high-efficiency wide-bandgap technology, STMicroelectronics has released the MasterGaN3* and MasterGaN5 integrated power packages ...
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Infineon and Panasonic accelerate GaN technology development for 650 V GaN power devices
Munich, Germany and Osaka, Japan – 2 September 2021 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and Panasonic ...
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