Increases Test Quality by Targeting Subtle Defects in FinFETs and Emerging Processes
Bangalore, November 15, 2016
Highlights:
- Innovative slack-based cell-aware test for 7-nm designs increases defect coverage
- FinFET SRAM defect modeling and test algorithms enable efficient test and repair of 7-nm memories
- New diagnostics and yield analysis support for 7-nm reduce turnaround time
Synopsys, Inc. (Nasdaq: SNPS) today announced it expanded its test and yield analysis solution targeting FinFET-specific defects to enable higher quality testing, repair, diagnostics and yield analysis of advanced 7-nanometer (nm) SoCs. To improve defect coverage, Synopsys has been collaborating with several semiconductor companies to advance testing and diagnostics methods for logic, memory and high-speed mixed-signal circuits targeted for manufacture with 7-nm processes. These collaborations are enabling rapid deployment of new functionality within Synopsys’ synthesis-based test solution, featuring TetraMAX® II ATPG, DesignWare® STAR Memory System®, and DesignWare STAR Hierarchical System.
Leading semiconductor companies ramping up design capabilities for emerging 7-nm processes are facing increasing test quality and yield management challenges. To address these challenges, Synopsys’ test solution delivers several innovative technologies that target defects occurring more frequently at emerging process nodes. For logic circuits, new modeling techniques, such as resistance sweeping, improve the ability of slack-based cell-aware tests to detect defects such as intra-cell partial bridges that are more prevalent with advanced FinFET processes. For embedded memory test and repair, the STAR Memory System solution incorporates custom algorithms based on silicon learning at the industry’s top silicon foundries to detect and repair defects exemplified by resistive fin shorts, fin opens and gate-fin shorts. Furthermore, the DesignWare STAR Hierarchical System enables high coverage manufacturing and characterization test patterns for the 7-nm DesignWare PHY IP to be efficiently applied through the SoC hierarchy.
To accelerate diagnosis of 7-nm yield issues, defect isolation to specific areas within design cells is possible through new support of cell-aware descriptions in the database shared between TetraMAX II ATPG and Yield Explorer® solutions. The combination of test and diagnostic advances increase 7-nm defect detection and speed up failure analysis and yield ramp in production manufacturing environments.
“The growing complexity and process variation found with advanced 7-nm FinFET processes requires improved test and yield technologies,” said John Koeter, vice president of marketing for IP and prototyping at Synopsys. “Our IP design teams are leveraging TetraMAX ATPG as well as STAR Memory System and STAR Hierarchical System test, repair and diagnostic solutions to help multiple customers designing with 7-nm IP improve their product quality and yield, while accelerating their time to market.”
“As a leading provider of comprehensive test and yield solutions, Synopsys is committed to helping designers meet their growing challenges of higher quality and faster yield ramp,” said Bijan Kiani, vice president of product marketing for the Design Group at Synopsys. “Through our on-going collaborations with leading semiconductor companies worldwide, we are delivering innovative solutions to address the specific requirements for advanced FinFET processes. These innovations will enable our customers to rapidly adopt 7-nm technologies to meet their goals for high-performance SoC products.”
