New Delhi, March 4, 2016 — The latest MDmesh™ DM2 N-channel Power MOSFET transistors from STMicroelectronics create new opportunities for power-supply designers to achieve greater efficiency in low-voltage power supplies for computers, telecom networks, industrial, and consumer devices.
As people around the world acquire, store, and share a rapidly increasing amount of digital data such as e-books, videos, photographs, and music files, the need to minimize energy consumption in the huge server farms that host the cloud, in the telecom networks that provide the means to connect anyone to anything, and where the data is ultimately used, continues to increase. ST is addressing this challenge with the world’s best power-density[1] solution, which combines the most advanced power-transistor structure with a compact, cost-effective, and thermally-efficient Power FLAT 8×8 HV packaging technology.
ST’s new power-transistor family comprises a wide range of super-junction Power MOSFETs with integrated fast-recovery diodes and breakdown voltages up to 650V. The combination of technical parameters – low gate charge, input capacitance and resistance, fast recovery phase of the intrinsic diode, very low recovery charge (Qrr) and recovery time (Trr) and the industry’s best soft-switching performance[2] – place the new devices ahead of competitive offerings.
ST’s new MDmesh™ DM2 Power MOSFET devices are available now in multiple package/breakdown-voltage combinations, with pricing from $1.55 for 1ku volumes.
For further information please go to www.st.com/mdmeshdm2
