Farhad Tabrizi, senior vice president of strategic memory planning and sensing at Samsung Semiconductor, Inc., will keynote at the MemCon 2014 conference on “Transforming the World’s Most Successful Memories.”
The keynote, which will be delivered at the Mission City Ballroom in the Santa Clara Convention Center on October 15th from 10:30 to 11a.m., will examine new paradigms for DRAM and vertical NAND Flash memory, spotlighting the long-lasting impact that faster, denser and lower power DRAM and NAND-based solid state drives will have on connected devices, the evolving data center and Internet-linked ecosystems.
New generations of DRAM and Vertical NAND offer enhanced performance, power thrift, packaging innovation and process efficiency to address the high value and time-sensitive business needs of new and evolving data centers. It is expected that these memory stalwarts will continue to lead the way in all major markets.
Samsung will examine the long-term significance of 3D vertical NAND stacking and TSV DRAM packaging technology. In addition, Tabrizi will review industry progress in the development of High Bandwidth Memory growth of the SSD market and explore the potential for adding intelligent functionality into memory solutions.
Also presenting for Samsung Semiconductor at MemCon 2014 will be J. S. Choi, senior manager of DRAM product planning, in a breakout session titled “Understanding DDR4 and Today’s DRAM Frontier” (NET 101) at 1:30p.m. in Room B3-B5. Choi will discuss why DDR4 will remain the memory of choice for the data center for years to come and how it will soon migrate to the PC marketplace. He will look at the various alternatives that server manufacturers have in specifying DDR4, the comparative value of DDR4 solutions and improvements in the DDR4 ecosystem.
