OptiMOSTM 300 V Offers High Efficiency and New Design Possibilities in Hard Switching Applications

Munich, Germany – June 2, 2015 – Infineon Technologies extends its medium voltage MOSFET portfolio with OptiMOS^TM300 V, setting a new standard in the Power MOSFET market.In doing so, the company confirms its position as market leader enabling energy efficient solutions in applications such as telecom systems, uninterruptible power supplies (UPS), motor control, industrial power supplies and DC/AC inverters.

The new OptiMOS 300 V helps system designers to increase power density and reduce cost with the highest level of reliability. Ultimately, for the end user, this translates into energy cost savings. For example, in hard switching applications such as AC/DC converters OptiMOS 300 V cuts energy losses by 50 percent. This allows for higher switching frequencies and, consequently, passive component and solution size reduction.Furthermore,OptiMOS 300 V can provide voltage spike headroom for better reliability, safety and ease of design in a 60 V telecom rectifier. The number of stages required in cascaded high voltage switch mode power supplies can also be reduced. Additionally, 110V AC UPS can now be realized with OptiMOS 300 V.

“With 300 V blocking capability, Infineon extends the benchmark OptiMOS technology into a so far non-mainstream voltage class to support evolving applications such as multilevel converters,” says Richard Kuncic, Vice President & General Manager Business Line DC/DC at Infineon Technologies AG. “Due to superior performance of OptiMOS technology and the wide application spectrum, we expect this voltage class to become a new standard in the power MOSFET market.”

Incorporating fast diode technology, OptiMOS300V offers 70 percent lower reverse recovery charge Q_rr compared to the next best alternative device. This characteristic leads to smooth body diode behavior and minimizes voltage overshoot.OptiMOS 300 V in the TO-220 package provides the industry’s best R_DS(on) with more than 58 percent lower Figure of Merit (FOM: R_DS(on) x Q_g)when compared to other available products. This translates directly into lower conduction losses and improved overall efficiency in high current applications such as motor control.