Electronics Maker
  • Home
  • Electronics News
  • Articles
  • Magazine
  • Events
  • Interview
  • Electronics Projects
No Result
View All Result
  • Home
  • Electronics News
  • Articles
  • Magazine
  • Events
  • Interview
  • Electronics Projects
No Result
View All Result
Electronics Maker
No Result
View All Result
Home Electronics News

ON Semiconductor Further Extends Scope of IGBT Offering with 1200 V Devices Based on 3rd Generation Ultra Field Stop Technology

Electronics Maker by Electronics Maker
May 10, 2016
in Electronics News
0
0
SHARES
26
VIEWS
Share on FacebookShare on Twitter

ON Semiconductor Further Extends Scope of IGBT Offering with 1200 V Devices Based on 3rd Generation Ultra Field Stop Technology

PCIM – Nuremberg, Germany. – 10. May 2016 – ON Semiconductor driving energy efficiency innovations, has introduced a new series of insulated gate bipolar transistors (IGBTs) which utilize its proprietary Ultra Field Stop trench technology. The NGTB40N120FL3WG,NGTB25N120FL3WG and NGTB40N120L3WG are designed to deliver elevated levels of operational performance in order to meet the exacting demands of modern switching applications. These 1200 volt (V) devices are able to achieve industry-leading total switching loss (Ets) characteristics; the remarkable improvement in performance is attributable in part to a very wide highly activated field-stop layer & optimized co-pack diode.

The NGTB40N120FL3WG has an Ets of 2.7 millijoules (mJ), while the NGTB25N120FL3WG has an Ets of 1.7 mJ. Both devices have a VCEsat of 1.7 V at their respective rated currents. The NGTB40N120L3WG is optimized for low conduction losses and has a VCEsat of 1.55 V, at rated current, with an Ets of 3 mJ. The new Ultra field stop products are co-packaged with a fast recovery diode that has soft turn-off characteristics and still offers minimal reverse recovery losses. The NGTB25N120FL3WG and NGTB40N120FL3WG are highly suitable for use in Uninterruptible Power Supplies (UPS) and solar inverters, whereas the NGTB40N120L3WG is mainly targeted at use in motor drives.

“Our new Ultra field Stop IGBTs along with optimized fast recovery diodes we manage to hit the sweet spot that perfectly balances VCEsat  and Ets, thereby resulting in reduced switching losses, and enhanced power efficiency in hard switching applications, across a broad range of switching frequencies. At the same time it still offers the robust operation and cost effectiveness that engineers expect from IGBTs,” states Asif Jakwani, senior director and general manager for ON Semiconductor’s Power Discrete Division.

Packaging and Pricing

The NGTB40N120FL3WG, NGTB25N120FL3WG and NGTB40N120L3WG are all supplied in RoHS-compliant TO−247 packages and respectively priced at $2.02, $1.76, and $2.12 per unit in 10,000 unit quantities.

Tags: Semiconductor & IC
Electronics Maker

Electronics Maker

Subscribe Newsletter

Subscribe to our mailing list to receives daily updates direct to your inbox!

*we hate spam as much as you do

Electronics Maker

It is a professionally managed electronics print media with highly skilled staff having experience of this respective field.

Subscribe Newsletter

Subscribe to our mailing list to receives daily updates direct to your inbox!

*we hate spam as much as you do

Quick Links

  • »   Electronics News
  • »   Articles
  • »   Magazine
  • »   Events
  • »   Interview
  • »   About Us
  • »   Contact Us

Contact Us

EM Media LLP
  210, II nd Floor, Sager Plaza – 1, Road No-44,, Plot No-16, Pitampura, New Delhi - 110034
  01145629941
  info@electronicsmaker.com
  www.electronicsmaker.com

  • Advertise with Us
  • Careers
  • Terms Of Use
  • Privacy Policy
  • Disclaimer
  • Cookie Policy

© 2020 Electronics Maker. All rights reserved.

No Result
View All Result
  • Home
  • Electronics News
  • Articles
  • Magazine
  • Events
  • Interview
  • Electronics Projects

© 2020 Electronics Maker. All rights reserved.