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New Yorker Electronics Releases Series of TVS Diodes Featuring 2% Breakdown Voltage Tolerance

Electronics Maker by Electronics Maker
February 16, 2018
in Electronics News
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Vishay_Super12_V-TVS_SeriesVishay Semiconductor VTVS5V0ASMF to VTVS63GSMF 400W TransZorb® Transient Voltage Suppressor (TVS) Diodes Designed for Laptops, Notebooks, Smartphones & Tablets

NORTHVALE, NEW JERSEY, USA – New Yorker Electronics has announced the release of the entire Vishay Semiconductors VTVS Series of 400W TransZorb® Transient Voltage Suppressor (TVS) Diodes, from VTVS5V0ASMF to VTVS63GSMF, in the SMF Package. The Series was also named a 2017 Vishay Super 12 Featured Product.

With their low 1mm profile, low-noise technology, and very fast response times, the devices released by New Yorker Electronics are ideal for line transient voltage protection in space-constrained electronics. This includes laptops, notebooks, tablets, smartphones and external hard drives.

The VTVSxxASMF series and the VTVSxxASMF feature voltages from 8.9V to 108V with breakdown voltage tolerances of 2% or 5% available. The TVS offer a peak pulse current from 2.9A to 20.3A, excellent clamping capability from 14.8V to 103.5V, low incremental surge resistance and operating temperatures from -55°C to +175°C.

The protection diodes provide ESD capability of ± 30 kV (air and contact discharge) in accordance with IEC  61000-4-2, support high-temperature soldering to 260°C / 10s at their terminals and meet the MSL Level 1 standard per J-STD-020. The AEC-Q101-qualified devices are RoHS-compliant, halogen-free and Vishay Automotive Grade.

Features & Benefit:
• Breakdown voltage tolerance down to 2%
• SMF package with low profile of 1mm
• High surge capability of 400W 10/1000µs
• Peak pulse current from 2.9A to 20.3A
• Vishay Automotive Grade; AEC-Q101-qualified
• RoHS-compliant and halogen-free
• High surge current
• Operating temperature: -55°C to +175°C
• Tolerance: ±5% for VTVSxxxA; ±2% VTVSxxxG
• “Low-Noise” technology with very fast response time

Tags: diodesICMOSFETs and infrared optoelectronicssemiconductors
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