3D NAND Technology Prompts Endurance Levels to Nearly that of Planar Floating-Gate-Based MLC Flash with a Lower per-GB Cost
NORTHVALE, New Jersey, USA – New Yorker Electronics is now distributing the new Innodisk M.2 3TE2 NVM Express Standard Grade DRAM-less SSD with 3D TLC NAND in both P80 (80mm H) and P42 (42mm H) models. Innodisk M.2 3TE2 is an NVM Express DRAM-less SSD (solid-state drive) designed as the standard M.2 form factor with PCIe interface. M.2 3TE2 supports PCIe Gen III x2 and is compliant with NVM 1.3. It also yields faster speeds, improved longevity and lower power requirements than its 2D predecessor. Moreover, it adopts industrial 3D TLC NAND Flash providing high endurance and reliability.
NAND, a type of non-volatile flash memory, does not require power to retain or store data. It uses a stacked architecture to arrange the memory cells within an SSD, instead of the planar or flat arrangement in past implementations. Digital cameras, USB flash drives, smartphones and SSDs use NAND flash memory for storage.
In the past, a typical planar TLC memory cell could endure no more than 500 or 1,000 write cycles. Today, with 3D NAND technology, the larger TLC size allows it to approach planar floating-gate-based MLC flash endurance levels.
Combined with sophisticated error detection and correction (ECC) functions, the M.2 3TE2 module can ensure full End-to-End Data Path Protection that secures the data transmission between host system and NAND Flash.
Memory cells are stacked vertically on the chip in a 3D NAND flash with TLC. It enables higher storage densities at a lower cost per bit and improves the endurance of the flash than two-dimensional (2D) or planar technology, which uses a single layer of memory cells.
The M.2 form factor specification is a newer iteration for internal solid state drives. M.2 SSDs fit into a designated M.2 slot on a computer motherboard. Depending on the motherboard and SSD, the M.2 slot on a motherboard utilizes either the SATA interface or the PCIe interface.
The P80 offers a capacity of 64GB to 1TB and is 22.0mm W x 80.0mm L x 3.5mm H. It is available with an optional H/W Write Protect and optional iCell. The P42 offers a capacity of 64GB to 512GB and is 22.0mm W x 42.0mm L x 3.5 mm H. Both the P80 and P42 Models have a thermal sensor, four channels, a P/E (program/erase) cycle of 3,000 write cycles and a 3,000,000-hour MTFB. Their environmental ratings include vibration at 20G 7~2000Hz, shock at 1500G @ 0.5ms and a storage temperature of -0℃ to +70℃.
Features & Benefits:
Innodisk P80
- PCIe Gen. III x2, NVMe 1.3
- Excellent data transfer speed
- Zero mechanical interference
- Anti-vibration mechanical design
- LDPC ECC engine supported
- End-to-end Data Path Protection
- iCell supported
Innodisk P42
- PCIe Gen. III x2, NVMe 1.3
- Excellent data transfer speed
- Zero mechanical interference
- LDPC ECC engine supported
- End-to-end Data Path Protection
Applications:
- Digital cameras
- USB Flash Drives
- Smartphones
- SSDs (NAND flash memory for storage)
Innodisk’s storage products are fully compliant with aerospace and defense standards and its embedded flash and DRAM storage featuring InnoRobust® are specially designed for aerospace and defense applications. Similarly, New Yorker Electronics is an AS9210 and ISO 9001:2015 certified source of capacitors, resistors, semi-conductors, connectors, filters, inductors and more. It distributes to all types of customers but operates exclusively at heightened military and aerospace performance levels.
New Yorker distributes the entire line of Innodisk Flash Storage, DRAM Modules and Embedded Peripherals – including Innodisk’s recently introduced smallest RAID 1 solution which can achieve real-time synchronization of information to ensure service continuity.
