Saves Space and Power in Mobile Applications
MICRO FOOT® Device Features Industry-Low RDS(ON) for 20 V MOSFETs With 1 mm or < 0.7 mm Square Outlines in Ratings Down to 1.2V
MALVERN, Pa. — June 18, 2015 — Vishay Intertechnology, Inc. introduced a new TrenchFET® 20 V n-channel MOSFET in the chipscale MICRO FOOT® 0.8 mm by 0.8 mm package with an ultra-thin 0.357 mm profile. Designed to save space, decrease power consumption, and extend battery usage in smartphones, tablets, wearable devices, solid-state drives, and portable medical devices such as hearing aids, the Vishay Siliconix Si8824EDB provides the industry’s lowest on-resistance for any 20 V device with a 1 mm square or < 0.7 mm square outline.
Optimized for use as a load switch, small-signal switch, and high-speed switch in power management applications, the Si8824EDB features extremely low on-resistance of 75 mΩ at 4.5 V, 82 mΩ at 2.5 V, 90 mΩ at 1.8 V, 125 mΩ at 1.5 V, and 175 mΩ at 1.2 V. These ratings are up to 25 % lower than the closest competing 20 V MOSFET in an identical CSP package, and up to 65 % lower than the closest competing 20 V device in the DFN 1 mm by 0.6 mm package. The MOSFET’s 20 V VDS, ESD protection, ratings down to 1.2 V, and low on-resistance provide a combination of safety margin, gate drive design flexibility, and high performance for lithium-ion battery-powered applications.
The Si8824EDB offers an extremely low on-resistance times area of 40 mΩ-mm² — 28 % lower than the closest competing 20 V MOSFET in the DFN 1 mm square package — to save space and reduce battery power consumption in mobile applications. The device’s low on-resistance means a very low voltage drop at DC and pulse peak currents, so less power is wasted as heat. The MOSFET’s 2000 V integrated ESD protection prevents static damage from handling or human body contact.
Samples and production quantities of the Si8824EDB are available now, with lead times of 14 to 16 weeks for larger orders.
