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Home Electronics News

New Higher Performance, Lower Cost Transistors Debut from GaN Systems

Electronics Maker by Electronics Maker
August 10, 2021
in Electronics News
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Key Takeaways

  • GaN Systems introduced two new transistors  packaged in a standard 8×8 mm PDFN package.
  • The GS-065-011-2-L allows users to reduce the cost per watt of delivered powered in 45W to 150W applications.
  • The GS-065-030-2-L is the first GaN product on the market that enables designers to get the advantages of low-cost GaN in applications up to the 3,000W power level.

OTTAWA, Ontario, August 10, 2021 – GaN Systems, the global leader in GaN power semiconductors, today introduced two new transistors in the industry’s broadest portfolio of GaN power transistors. The transistors are packaged in a standard 8×8 mm PDFN package. The GS-065-011-2-L allows users to reduce the cost per watt of delivered powered in 45W to 150W applications and the GS-065-030-2-L is the first GaN product on the market that enables designers to get the advantages of low-cost GaN in applications up to the 3,000W power level.  These new parts add to the GaN Systems family of low-cost GaN transistors that empower designers to take the next step in improved performance in efficiency, thermal management, and power density with increased design flexibility and cost effectiveness to meet new demands from consumer, industrial, and data center customers.

These new transistors feature lower on-resistance, increased robustness, and thermal performance, higher VDS(transient) rating, and an industry-standard form factor that eases customer adoption, scalability, and commercialization.

 The GS-065-011-2-L is a 650 V, 11 A, 150 mΩ bottom-side cooled transistor ideal for consumer electronics applications such as chargers and adapters, including higher power adapter designs that benefits from the transistor’s improved thermal performance. The GS-065-030-2-L is a 650 V, 30A, 50 mΩ bottom-side cooled transistor, which features the lowest RDS(on) in GaN Systems’ PDFN product family. Lower RDS(on) means lower power loss and higher power rating, resulting in higher efficiency and power density. The GS-065-030-2-L GaN transistor is perfect for data center, industrial, and 5G applications such as telecom and server SMPS, motor drives, energy storage systems, and Bridgeless Totem Pole PFC solutions.

“GaN has made its mark in power electronics – in size, weight, efficiency, cost, and performance – and we are proud of the advancements we have made with every new generation of products so that customers can maximize the benefits of GaN. With these new GS-065-011-2-L and GS-065-030-2-L products, our customers can leverage the benefits that come from smaller, more efficient, and more cost-effective power electronics,” said Jim Witham, CEO at GaN Systems.

The products are now available for purchase at GaN Systems’ distributors. For more information, please visit the GaN Systems’ product page to download datasheets and more.

Tags: power semiconductors
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