New SuperFlash Memory devices in low-operating voltage range from 1.65 to 1.95V
20 January 2015 – Microchip Technology Inc., a leading provider of microcontroller, mixed-signal, analog and Flash-IP solutions, has announced an expansion of its 1.8V Serial Quad I/O™ (SQI) SuperFlash® Memory with the SST26WF080B and SST26WF040B devices. These devices offer 4-Mbit and 8-Mbit of memory and are manufactured with Microchip’s high-performance SuperFlash technology, which provides the industry’s fastest erase times and superior reliability.
To learn more about Microchip’s SST26WF080B/040B devices, visit http://www.microchip.com/SST26WF080B-040B-Page-011915a.
The SST26WF080B/040B provides the fastest erase times of any competing device due to the use of SuperFlash technology. Sector and block erase commands are completed in just 18 ms and a full chip erase operation is completed in 35 ms. Competing devices require in the range of 5 to 15 seconds to complete a full chip erase operation, making the SST26WF080B/040B approximately 300 times faster. The fast erase times can provide significant cost savings to customers by minimising the time required for testing and firmware updates, therefore increasing their manufacturing throughput.
The SQI interface is a high-speed 104 MHz quad I/O serial interface which allows for high-data throughput in a low pin-count package. This interface enables low latency execute-in-place (XIP) capability, allowing programs to be stored and executed directly from the Flash memory and eliminating the need for code shadowing on a RAM device. The SST26WF080B/040B provides faster data throughput than a comparable x16 parallel Flash device without the associated high cost and high-pin count of parallel Flash. The SQI interface also offers full command-set backwards compatibility to the traditional Serial Peripheral Interface (SPI) protocol.
Designed for low-power consumption, the SST26WF080B/040B helps maximise battery life in portable powered applications. Standby current consumption is 10 µA typical, and a deep power-down mode further reduces current consumption to 1.8 µA typical. Active read current at 104 MHz is 15 mA typical. The combination of 1.8V operation with low-power consumption and small form factor packaging makes the SST26WF080B/040B an excellent choice for applications such as mobile handsets, Bluetooth® headsets, GPS, camera modules, hearing aids and any battery-powered devices.
The SST26WF080B/040B offers excellent quality and reliability with 100-year data retention and device endurance of over 100,000 erase/write cycles. Enhanced safety features include software write protection of individual blocks for flexible data/code protection and a One-Time Programmable (OTP)
2 Kbyte Secure ID area. These features protect against unauthorised access and malicious read, program and erase intentions. The devices also include a JEDEC-compliant Serial Flash Discoverable Parameter (SFDP) table, which contains identifying information about the function and capability of the SST26WF080B/040B in order to simplify software design.
“The addition of the SST26WF080B/040B SuperFlash devices to our low-power 1.8V Serial Quad I/O product line provides customers with an excellent solution for high speed Flash memory with the industry’s fastest erase times,” said Randy Drwinga, vice president of Microchip’s Memory Products Division. “The small form factor and low-power consumption make them ideal choices for the next generation of portable battery-powered embedded designs, including Internet of Things applications.”
