EiceDRIVER™ is Setting New Standards in System Robustness
Munich, Germany – May 19, 2015 –Infineon Technologies AG has launched a new family of CoolMOS™ C7 series super junction (SJ) MOSFETs. The 600V series offers a 50 percent reduction in turn-off losses compared to the CoolMOS™ CP, offering a GaN-like level of performance in PFC, TTF and other hard-switching topologies. The CoolMOS C7 achieves an industry first by delivering an area-specific on resistance (RDS(ON)*A) of just 1Ω per mm2, extending Infineon’s portfolio of products with lowest RDS(ON) per package to support customer efforts to further increase power density. The new CoolMOS series features ultra-low switching losses and targets high power SMPS applications such as server, telecom, solar and industrial applications requiring high efficiency,a reduced Bill of Materials (BoM) and total cost of ownership (TCO).
Efficiency and TCO driven applications such as hyperscale data centers and telecom basestations benefit from the switching loss reduction offered by the
CoolMOS C7. Efficiency gains of 0.3 percentto 0.7 percent in PFC and 0.1 percent in LLC topologies can beachieved,leading to significant total cost of ownership benefits. In the case of a 2.5kW server PSU, for example, using C7 600V MOSFETs can result inenergy cost reductions of around 10 percentfor PSU energy loss.
In BoM and cost driven designs such as enterprise servers, the CoolMOS C7
600V devicesoffer a cost reduction in magnetics. Due to the significantly lower gate charge and output capacitance, the C7 can be operated at two times higher switching frequencies with only a marginal penalty in efficiency. This enables the size of magnetic components to be minimized, lowering the overall BoM cost. For example, doubling the switching frequency from 65kHz to 130kHz may reduce magnetic component cost by as much as 30 percent.
The CoolMOS C7 600V family will be manufactured in two 300 mm fabs ensuringsecurity of supply for customers. The family comes in a broad range of RDS(ON) values and packages, withinnovative options such as the TO-247 4-pin package available immediately at time of launch. The fourth pin boosts efficiency in full load by up to 0.4 percent by eliminating voltage drops across the source inductance caused by fast transients.
“As part of Infineon’s high-voltage MOSFET portfolio, the new CoolMOS C7 600V family is a major ‘stepping stone’ to Infineon’s upcoming GaN devices which are expected to launch in early 2016”, stated Peter Wawer, Vice President and General Manager of Businessline AC/DC at Infineon. “The CoolMOS C7 devices deliver lowest losses and higher frequencies up to 200 kHz in an established and proven technology being available in high volume, while Infineon’s GaN technology will further increase the frequency range and enable new topologies.”
Infineon´s complementary new 2EDN7524 EiceDRIVER™ ICs in industry standard pin-out feature two independent, non-isolated low-side gate drivers each capable of providing a 5A source and sink peak current.Both channels operate with typical rise and fall times of just 5ns, while the excellent 1ns channel-to-channel delay matching allows configuration of simultaneous switching to double the total drive current. Despite the high current, the output stages offer a very low RDS(ON), minimizing power dissipation in the driver even if a very small or no external gate resistor is used. Exceptional robustness against ground bounce for system reliability is ensured through the ability of the driver ICs to handle up to -10VDC at the control and enable inputs.