Infineon Technologies supports Samsung’s Galaxy S5 with a total of eight RF components. The German semiconductor manufacturer is the partner of choice for LTE Low Noise Amplifiers (LNA), Quad LNA banks, a GPS LNA and SPDT RF switches.
“The smartphone market shows unrivaled innovation speed. Being able to offer new product generations with higher integration and smaller footprint in next to no time is the key to success. We are proud to be chosen by leading players in this field like Samsung to help bring reliable service and more functionalities to the users,” said Philipp von Schierstaedt, Vice President and General Manager of the business unit RF & Protection Devices at Infineon Technologies.
Infineon’s LTE LNAs and Quad LNA banks are specially designed to enhance the data rate in smartphones by up to 96 percent compared to solutions without LNAs, thus fully exploiting the speed of the LTE communication standard. The GPS LNA ensures reliable navigation functionality by effectively preventing interference from other signals present in the phone. Last but not least, Infineon’s SPDT RF Switches were chosen to reliably route the RF signals to their designated paths.
The S5 is the latest model of Samsung Electronics’ flagship smartphone. It is equipped with two internal Wifi antennas and a Download Booster that achieves outstanding transfer rates by combining the data transmission via LTE and Wifi.
More than 11 million units of the Android based phone were sold during the first month after the official release.
Infineon offers a broad portfolio for both mobile devices and cellular infrastructure, including of RF devices, TVS diodes, silicon microphones and power management ICs.
The Samsung Galaxy S5 contains the following Infineon components:
LTE LNA (Low Noise Amplifier)
- BGA7L1N6
- BGA7M1N6
- BGA7H1N6
Quad-band LTE LNA bank
- BGM7MLLM4L12
- BGM7LLHM4L12
GPS LNA
- BGA824N6S
SPDT RF Switches
- BGS12PL6
- BGS12SL6
