‘GaN power transistor market accelerating quickly’ says CEO reconfirming lead position
OTTAWA, Ontario – June, 2015 – GaN Systems, the leading developer of gallium nitride power switching semiconductors, has confirmed the world’s smallest 650V, 15A gallium nitride transistor. With a footprint of just 5.0 x 6.5mm, the GS66504B – one of a family of 650V devices that spans 7A to 200A – is 50% smaller than competing devices.
Transistors Comments Jim Witham, CEO GaN Systems: “We were somewhat surprised to see announcements at last month’s PCIM Europe power electronics exhibition and conference that trumpeted gallium nitride 600V, 15A devices in 8x8mm dual-flat no-lead (DFN) packaging as the ‘industry’s smallest’ enhancement mode devices – our part is clearly much smaller. But I suppose this is just an indication of how quickly the GaN market is moving, and a positive indication that silicon has reached its limits.”
He continued: “Our message to designers in applications as diverse as flat screen TVs, games consoles, washing machines, inverters, electric vehicles, motors and wider is the same: if you are not on-board with GaN, you will be left behind by your competitors.”
GaN Systems is the first company to have developed and brought a comprehensive product range of devices with current ratings from 7A to 250A to the global market – its Island Technology® die design, combined with its extremely low inductance and thermally efficient GaNPX™ packaging and Drive Assist technology means the company’s GaN transistors offer a 40-fold improvement in switching and conduction performance over traditional silicon MOSFETs and IGBTs. Devices are available now through its worldwide distribution network.
