Bangalore, July 21, 2015—Analog Devices, Inc. introduced today the HMC1127 and the HMC1126 MMIC (Monolithic Microwave Integrated Circuit) distributed power amplifiers. Covering the frequency range of 2-50 GHz, these new power amplifier die simplify system design and improve performance by eliminating the need for RF switches between frequency bands. Each amplifier incorporates I/Os that are internally matched to 50 Ohms, facilitating easy integration into multi-chip modules. All data is taken with the chips connected via two 0.02-mm (1 mil) wire bonds measuring 0.31-mm (12 mils) in length. Based on a GaAs (gallium-arsenide) pHEMT (pseudomorphic high-electron mobility transistor) design, the HMC1126 and HMC1127 are ideal for instrumentation, microwave radio and VSAT antennas, aerospace and defense systems, telecommunications infrastructure, and fiber optic applications.
HMC1127 GaAs pHEMT MMIC Distributed Power Amplifier Key Features:
• P1dB output power: 12.5 dBm
• Psat output power: 17.5 dBm
• Gain: 14.5 dB
• Output IP3: 23 dBm
• Supply voltage: +5 V @80 mA
• 50 Ohm matched I/O
• Die size: 2.7 x 1.45 x 0.1 mm
HMC1126 GaAs pHEMT MMIC Distributed Power Amplifier Key Features:
• P1dB output power: 17.5 dBm
• Psat output power: 21 dBm
• Gain: 11 dB
• Output IP3: 28 dBm
• Supply voltage: +5 V@65 mA
• 50 Ohm matched I/O
• Die size: 2.3 x 1.45 x 0.1 mm
