8-Gb Device Increases Power Efficiency for High-End Computer and Storage Systems
SAN CARLOS, Calif. — July 13, 2016 — Alliance Memory today introduced a new monolithic high-speed, low-voltage CMOS double data rate 3 synchronous DRAM (DDR3L SDRAM) with an 8-Gb density in the 78-ball, 9-mm by 13.2-mm, lead (Pb)-free FBGA package. Delivering increased power efficiency for high-end computer and storage systems, the 1G x 8 AS4C1G8MD3L offers a double data rate architecture for extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz.
The AS4C1G8MD3L’s transfer rates are twice as high as DDR and DDR2 SDRAMs, providing higher bandwidth for newer-generation microprocessors in industrial, medical, networking, telecom, and aerospace applications. The 8-GB DDR3L SDRAM operates from a single +1.35-V power supply and is backwards-compatible with +1.5-V power supplies to enable large memory subsystems. The device is a logical choice for customers that require increased memory yet face board space constraints.
The AS4C1G8MD3L is available with an extended commercial temperature range of 0 °C to +95 °C (AS4C1G8MD3L-12BCN). Internally configured as eight banks of 1G x 8 bits, the DDR3L SDRAM features a fast 64-ms, 8192-cycle refresh from 0 °C to +85 °C and 32 ms from +85 °C to +95 °C.
The device released today offers fully synchronous operation and provides programmable read or write burst lengths of 4 or 8. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, and a programmable mode register allows the system to choose the most suitable modes to maximize performance.
In addition to the 1G x 8 AS4C1G8MD3L, Alliance Memory also offers the 512M x 16 AS4C512M16D3L in the 96-ball FBGA package, which is available in an extended commercial temperature range (AS4C512M16D3L-12BCN) and an industrial temperature range from -40 °C to +95 °C (AS4C512M16D3L-12BIN). Alliance Memory is one of the few suppliers of monolithic DDR3L SDRAMs with high densities to 8 Gb. In addition, with minimal die shrinks, the single-die AS4C1G8MD3L provides a reliable drop-in, pin-for-pin-compatible replacement for a number of similar solutions — eliminating the need for costly redesigns and part requalification.
Samples and production quantities of the new 8-GB DDR3L SDRAM are available now, with lead times of six to eight weeks. Pricing for U.S. delivery starts at $18.00 per piece.
