Alliance Memory Launches New 256Mb High-Speed CMOS SDRAMs in the 54-Pin TSOP II Package

SAN CARLOS, Calif. — Jan. 17, 2018 — Alliance Memory today extended its offering of 256Mb high-speed CMOS SDRAMs with new x8 and x4 devices in the 54-pin 400-mil plastic TSOP II package.

“Alliance Memory is the market’s SDRAM leader, offering the broadest product lineup of any vendor, with densities from 16Mb to 512Mb in a wide range of configurations and packages,” said TJ Mueller, Vice President of Marketing at Alliance Memory. “We are excited to add these new 256Mb devices to our portfolio, which complement our existing x16 and x32 parts.”

Internally configured as four banks of 32M x 8 bits and 64M x 4 bits, respectively, the AS4C32M8SA and AS4C64M4SA provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions used for image storage and video buffering in consumer and industrial products, and wearables. The SDRAMs offer a synchronous interface, operate from a single +3.3V (± 0.3V) power supply, and are lead (Pb)- and halogen-free.

The devices released today feature fast access time from clock down to 5.4 ns and clock rates to 166 MHz, and they are available in commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) operating temperature ranges. The SDRAMs offer programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance.

Device Specification Table: