SAN CARLOS, Calif. — June 23, 2016 — Alliance Memory today extended its offering of 256M high-speed CMOS synchronous DRAMs (SDRAM) with two new x32 devices in the 86-pin 400-mil plastic TSOP II package.
Internally configured as four banks of 8M word x 32 bits, the high-density AS4C8M32S-6TIN and AS4C8M32S-7TCN provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, commercial, medical, telecom, and networking products requiring high memory bandwidth. The SDRAMs offer a synchronous interface, operate from a single +3.3-V (± 0.3 V) power supply, and are lead (Pb)- and halogen-free.
The devices released today feature fast access time from clock down to 5.4 ns and clock rates to 166 MHz, and they are available in commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) temperature ranges. The SDRAMs provide programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance.
The AS4C8M32S-6TIN and AS4C8M32S-7TCN are the latest in Alliance Memory’s full line of high-speed SDRAMs, which includes components with densities of 16 Mb, 64 Mb, 128 Mb, 256 Mb, and 512 Mb in the 50-pin TSOP II, 54-pin TSOP II, 54-ball TFBGA, 86-pin TSOP II, and 90-ball TFBGA packages. For Alliance Memory customers, the devices eliminate costly redesigns by providing long-term support for end-of-life (EOL) components. In addition, the company doesn’t perform die shrinks, which frees up engineering resources.
