Plano, Texas – March 13th, 2017 – Featuring low figure-of-merit on-resistance and gate charge specifications, the latest 40V and 60V dual, co-packaged enhancement mode MOSFETs introduced by Diodes Incorporated minimize power losses, enabling cost-effective, high‑efficiency, automotive-compliant power management solutions. Targeted at synchronous rectification applications in automotive instrumentation clusters, head-up displays, and infotainment, navigation and driver assistance systems, the DMNH4015SSDQ and DMTH6016LSDQ are qualified to AEC-Q101 Rev-D standard for high reliability and supported by a PPAP (production part approval process).
When coupled with a PWM control IC, these dual MOSFETs are capable of creating highly efficient and cost-effective DC-DC converters. For example, when switched at 400kHz, the 60V DMTH6016LSD delivers a 5V output at a load current of 2A, while achieving an efficiency of 95%. Similarly, the 40V DMNH4015SSDQ delivers 5V at 2A with an efficiency of 91%.
Both devices are 100% avalanche rated to withstand the high pulse energy that can result from inductive loads, and are specified with a maximum junction temperature of +175C for operation in high ambient-temperature environments.
Supplied in standard, SO-8 packages, the DMNH4015SSDQ is priced at $0.34 each in 3000 piece quantities and the DMTH6016LSDQ is priced at $0.41 each in 3000 piece quantities.
