RECOM R-REF01-HB UNIVERSAL HALF-BRIDGE REFERENCE DESIGN

RECOM opens new doors with its universal half-bridge reference design which is a platform design that can be used to compare the real-life performance of various high power IGBT, 1st/2nd generation SiC, GaN, MOSFET and Cascode switching technologies. As the…
GaN Power Devices: Potential, Benefits, and Keys to Successful Use

By Bill Schweber for Mouser Electronics For well over a decade, industry experts and analysts have been predicting that viable power-switching devices based on gallium nitride (GaN) technology were “just around the corner.” These GaN-based switches would offer greater efficiency, power handling,…
Global Leaders Collaborate on GaN Technology

OTTAWA, Ontario – October 2, 2017 – The world is challenged with unsustainable increases in power consumption, combating climate change, implementing cleantech technologies and meeting green, CO2 reduction initiatives. Taiwanese electronics manufacturers work at the forefront of these efforts. To meet these…

Mountain View – July 18, 2017 – GaN Systems, the world’s leading provider of GaN power transistors, announced the closing of an investment round led by BMW’s investment arm, BMW i Ventures. Consistent with its investment strategy, BMW i Ventures recognizes…