Pushes the performance boundary to the next level
Munich, Germany – 21 November 2017 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) releases the latest high-voltage Superjunction MOSFET technology, the 600 V CoolMOS™ CFD7 completing the CoolMOS 7 series. This new MOSFET addresses the high power SMPS market for resonant topologies. It offers industry-leading efficiency and reliability in soft switching topologies like LLC and ZVS PSFB. This makes it a perfect fit for high power SMPS applications such as Servers, Telecom equipment power, and EV charging stations.
The 600 V CoolMOS CFD7 succeeds the CoolMOS CFD2. The new MOSFET is up to 1.45 percent more efficient than its predecessor or competitor offerings. It combines all of the advantages of a fast switching technology with high commutation ruggedness, without impacting the easy implementation in the design-in process. The 600 V CoolMOS CFD7 features reduced gate charge (Q g) and improved turn-off behavior. Additionally, it has a reverse recovery charge (Q rr), which is up to 69 percent lower than competing products in the marketplace. The 600 V CoolMOS CFD7 provides industry-leading solutions for THD and SMD devices, which supports high power density solutions.
The 600 V CoolMOS CFD7 is available now in mass production and samples can be ordered. More information is available at www.infineon.com/cfd7.